Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular power supply distribution means
Patent
1996-06-10
1997-08-12
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular power supply distribution means
257333, 257334, 257532, 257203, 257300, 257208, H01L 2978, H01L 2702, H01L 2710
Patent
active
056568347
ABSTRACT:
Integrated circuits running with high frequencies are a potential source for RFI (Radio Frequency Interference). To reduce RFI, on-chip dedoupling capacitors are included in the design. To gain maximum advantage of these decoupling capacitors, they should be placed close to drivers and flip-flops. In a standard cell design approach for fabrication of the ICs, capacitors are embedded below the power supply lines. These capacitors are put in special cells, called cap-cells, which are placed by the place and route software on either side of each row of standard cells. Thin oxide capacitors are preferred because they offer the largest capacitance per area. In addition, first and second metal above the capacitor are increased to form thick oxide capacitors that give additional capacitance.
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"Speed and Complexity Fuel CMOS ASIC Growth", ASIC & EDA, Jan. 1993, beginning at p. 24.
Grzyb Claus D.
Mizrahi-Shalom Ori K.
Crane Sara W.
Eason Leroy
Philips Electronics North America Corporation
Williams Alexander Oscar
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