Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2009-06-16
2010-12-14
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Reexamination Certificate
active
07851897
ABSTRACT:
IC package structures for high power dissipation and low RDSon. The package can be considered an inverted QFN package typically manufactured from a double etched lead frame that is then formed (stamped) to receive the electronic devices for connection and wire bonding to the lead frame leads, followed by potting and dicing. Using a split paddle allows the packaging of multiple, electrically isolated power devices. The package is particularly advantageous for packaging vertical power MOSFET devices. Various embodiments are disclosed.
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Cate Steven D.
Ghai Ajay Kumar
Blakely , Sokoloff, Taylor & Zafman LLP
Maxim Integrated Products Inc.
Nguyen Dao H
Nguyen Tram H
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