IC on non-semiconductor substrate

Details IC on non-semiconductor substrate IC on non-semiconductor substrate

2008-04-08

2008-04-08

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S347000, C257SE27111, C438S479000, C438S764000

Reexamination Certificate

active

11398910

ABSTRACT:
An integrated circuit and method of fabrication including a non-semiconductor material substrate with a layer of single crystal rare earth deposited on the surface thereof. A layer of single crystal semiconductor material is grown on the layer of single crystal rare earth and an integrated circuit is formed in the layer of single crystal semiconductor material. In a preferred embodiment the single crystal semiconductor material is silicon and the integrated circuit is formed by standard semiconductor industry processes.

REFERENCES:
patent: 6734453 (2004-05-01), Atanackovic et al.
patent: 6852575 (2005-02-01), Bojarczuk, Jr. et al.

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