IC modification with focused ion beam system

Details IC modification with focused ion beam system IC modification with focused ion beam system

1991-01-14

1992-08-18

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250309, 156626, H01J 37304

Patent

active

051401649

ABSTRACT:
Apparatus is provided which includes a FIB column having a vacuum chamber for receiving an IC, means for applying a FIB to the IC, means for detecting secondary charged particles emitted as the FIB is applied to the IC, and means for electrically stimulating the IC as the FIB is applied to the IC. The apparatus may be used, for example, (1) to locate a conductor buried under dielectric material within the IC, (2) for determining milling end-point when using the FIB to expose a buried conductor of the IC, and (3) to verify the repair of an IC step-by-step as the repair is made.

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