IC memory cells with reduced alpha particle influence

Details IC memory cells with reduced alpha particle influence IC memory cells with reduced alpha particle influence

1986-02-20

1987-11-10

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

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357 24, 357 14, 357 236, 357 42, 357 46, 357 2311, 357 2314, 365150, 365149, 365184, H01L 2978

Patent

active

047061073

ABSTRACT:
A semiconductor memory device has a semiconductor substrate with a first semiconductor region of one conductivity type in the substrate. A second semiconductor region of the opposite conductivity type is formed in the first semiconductor region. A third semiconductor region of the opposite conductivity type is arranged to be in contact with the first semiconductor region. A fourth semiconductor region of the one conductivity type is formed in the third semiconductor region. A fifth semiconductor region of the one conductivity type, within the semiconductor substrate, has a concentration which is higher than the impurity concentration of the first semiconductor region and is provided under the third semiconductor region. A continuous gate electrode is provided via a gate insulating layer formed on the surface of the first semiconductor region and on the surface of the third semiconductor region. The first, second and third semiconductor regions and the gate electrode form a first insulated-gate field effect transistor. The second, third and fourth semiconductor regions and the gate electrode serving as a second insulated-gate field effect transistor.

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