IC device having a vertical MOSFET and an auxiliary component

Details IC device having a vertical MOSFET and an auxiliary component IC device having a vertical MOSFET and an auxiliary component

1988-06-29

1989-11-14

James, Andrew J.

357 52, 357 47, 357 48, 357 63, 357 64, H01L 2700

Patent

active

048811076

ABSTRACT:
A IC device includes an underlying layer of a first conductivity type, an overlying layer of the first conductivity type, an isolation layer of a second conductivity type formed between the underlying and overlying layers, and an isolation region of the second conductivity type extending into the overlying layer from a top surface and separating a second portion from a first portion of the overlying layer. The device also includes a channel region formed in the first portion of the overlying layer to form a vertical MOSFET and an auxiliary region formed in the second portion of the overlying layer to form an auxiliary integrated circuit component. A recombination layer of polycrystalline silicon or other material having abundant recombination centers is located under the second portion of the overlying layer.

REFERENCES:
patent: 4053925 (1977-10-01), Burr
patent: 4559086 (1985-12-01), Hawkins
patent: 4672407 (1987-06-01), Nakagawa
Wrathall, "The Design of a High Power Solid State Automotive Switch in CMOS-VDMOS Technology", IEEE, Power Electronics Specialists Conference Record, 1985, pp. 229-233.
S. M. Sze, "Physics of Semiconductor Devices", John Wiley & Sons, New York, 1981, pp. 37-38.
Einzinger et al., "Monolithic IC Power Switch for Automotive Applications", ISSCC 1986, 1986 IEEE International Solid-State Circuits Conference, Feb. 19, 1986, pp. 22-23, 289.

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