IC chip with nanowires

Details IC chip with nanowires IC chip with nanowires

2008-03-04

2008-03-04

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257SE27051, C257SE27073, C257SE29020, C257SE29024, C257SE29070, C257SE29327, C257S910000, C257S922000

Reexamination Certificate

active

10902486

ABSTRACT:
Arrangement of nanowires with PN junctions between bit lines and word lines are arranged as a ROM memory cell array. A number of the nanowires have dielectric regions and are present only as a dummy. The connections between word and bit lines may also exist as transistors which turn on or turn off only when a gate voltage is applied. A number of these transistors are constructed in complementary fashion and/or have insulating regions built in and serve as a dummy.

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Cui, Yi., et al.: “Diameter-controlled synthesis of single-crystal silicon nanowires”; Applied Physics Letters, vol. 78, No. 15, Apr. 9, 2001, pp. 2214-2216.

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