Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2008-03-04
2008-03-04
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257SE27051, C257SE27073, C257SE29020, C257SE29024, C257SE29070, C257SE29327, C257S910000, C257S922000
Reexamination Certificate
active
07339186
ABSTRACT:
Arrangement of nanowires with PN junctions between bit lines and word lines are arranged as a ROM memory cell array. A number of the nanowires have dielectric regions and are present only as a dummy. The connections between word and bit lines may also exist as transistors which turn on or turn off only when a gate voltage is applied. A number of these transistors are constructed in complementary fashion and/or have insulating regions built in and serve as a dummy.
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Kreupl Franz
Mio Hannes
Dickstein, Shapiro. LLP.
Infineon - Technologies AG
Jackson Jerome
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