I.sup.2 L With polysilicon diodes and interconnects

Details I.sup.2 L With polysilicon diodes and interconnects I.sup.2 L With polysilicon diodes and interconnects

1981-07-23

1983-04-19

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307459, 357 20, 357 59, 357 65, 357 68, 357 92, H01L 2904, H01L 2704, H03K 19091, H03K 19092

Patent

active

043807089

ABSTRACT:
An integrated circuit includes a number of diode-coupled gate circuits, each having an inverter transistor. The logic signals are coupled between the gate circuits by conductive tracks which also form the coupling diodes. These diodes are mono-poly or poly diodes, and are formed integrally with the conductive tracks to achieve a flexible yet simple construction.

REFERENCES:
patent: 4041522 (1977-08-01), Oguey et al.
patent: 4148055 (1979-04-01), Edlinger et al.
patent: 4160989 (1979-07-01), de Brebisson et al.
patent: 4227203 (1980-10-01), Mikoshiba
Hewlett, Jr., IEEE J. of Solid State Circuits, vol. SC-10, No. 5, Oct. 1975, pp. 343-348.
Jaeger et al., IBM Technical Disclosure Bulletin, vol. 19, No. 10, Mar. 1977, pp. 3942-3946.
Mikoshiba, IEEE J. of Solid State Circuits, vol. SC 13, No. 4, Aug. 1978, pp. 483-489.

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