I.sup.2 L Memory with nonvolatile storage

Details I.sup.2 L Memory with nonvolatile storage I.sup.2 L Memory with nonvolatile storage

1979-11-21

1984-01-31

Larkins, William D.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 23, 357 92, 365 95, 365184, G11C 1140, H03K 19091, H01L 2704, H01L 2978

Patent

active

044293267

ABSTRACT:
An I.sup.2 L type nonvolatile memory of this invention has a structure wherein a floating gate is disposed through an insulating film on the surface of a semiconductor layer in the vicinity of a base region of an NPN transistor in an I.sup.2 L. The I.sup.2 L type nonvolatile memory of this invention controls current to flow through the base region of the NPN transistor of the I.sup.2 L, by means of charges to be stored in the floating gate. That is, the collector output current of the NPN transistor of the I.sup.2 L is modulated in dependence on the presence or absence of a channel underneath the floating gate as is generated depending on the presence or absence of charges within the floating gate and the polarity of the charges. As a result, the variation of the base current appears as an output signal at a collector terminal of the NPN transistor of the I.sup.2 L, and data stored in the floating gate can be read out.

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patent: 4247861 (1981-01-01), Hsu

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