Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – active junction...
Reexamination Certificate
2011-06-07
2011-06-07
Sefer, Ahmed (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, active junction...
C257S004000, C257S005000, C257S208000, C257S209000, C257S295000, C257S296000, C257S529000, C257SE47001
Reexamination Certificate
active
07956358
ABSTRACT:
A memory device includes two electrodes, vertically separated and having mutually opposed contact surfaces, between which lies a phase change cell. The phase change cell includes an upper phase change member, having a contact surface in electrical contact with the first electrode; a lower phase change member, having a contact surface in electrical contact with the second electrode; and a kernel member disposed between and in electrical contact with the upper and lower phase change members. The phase change cell is formed of material having at least two solid phases, and the lateral extent of the upper and lower phase change members is substantially greater than that of the kernel member. An intermediate insulating layer is disposed between the upper and lower phase change members adjacent to the kernel member.
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Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Sefer Ahmed
Woldegeorgis Ermias
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