I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

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136264, 136265, 357 16, 357 30, 437 5, H01L 31072, H01L 310328, H01L 3118

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050788043

ABSTRACT:
A thin film I-III-VI.sub.2 based solar cell having a first layer of copper indium gallium selenide, a second layer of cadmium zinc sulfide, a double layer of zinc oxide, and a metallization structure comprised of a layer of nickel covered by a layer of aluminum. An optional antireflective coating may be placed on said metallization structure. The cadmium zinc sulfide layer is deposited by means of an aqueous solution growth deposition process and may actually consist of two layers: a low zinc content layer and a high zinc content layer. Photovoltaic efficiencies of 12.5% at Air Mass 1.5 illumination conditions and 10.4% under AMO illumination can be achieved.

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patent: 4612411 (1986-09-01), Wieting et al.
N. C. Sharma et al., Thin Solid Films, vol. 60, pp. 55-59 (1979).
S. Major et al., Solar Energy Materials, vol. 17, pp. 319-327 (1988).
W. E. Devaney et al., Progress Report, DOE Contract Zl-8-06031-8, Apr. 1989, NTIS Order No. 89009449, Oct. 1989.

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