I.I.L. with injector base resistor and schottky clamp

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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357 15, 357 44, 357 46, 357 92, H01L 2704

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041318064

ABSTRACT:
This invention relates to an inverter with a lateral bipolar pnp (npn) transistor and a vertical, bipolar npn (pnp) transistor which vertical transistor has at least one collector. The collector of the lateral transistor is connected integrally with the base of the vertical transistor. The emitter of the vertical transistor is connected to one terminal of a supply voltage source, and the emitter of the lateral transistor is connected to the other terminal of the supply voltage source. A resistance is connected between the base of the lateral transistor and the said one terminal of the supply voltage source.
The inverter is formed in an integrated circuit which includes a substrate which is preferably a semiconductor on which both a pnp (npn) lateral transistor and an npn (pnp) vertical transistor are formed in an epitaxial layer which has been deposited on the substrate. A portion of the emitter of the vertical transistor forms the base of the lateral transistor. A portion of the collector of the lateral transistor forms the base of the vertical transistor. The emitter of the vertical transistor is located as a buried layer, while the collectors of the vertical transistor are located at the surface of the epitaxial layer.

REFERENCES:
patent: 3569800 (1971-03-01), Collins
patent: 3573573 (1971-04-01), Moore
patent: 3631309 (1971-12-01), Myers
patent: 3654530 (1972-04-01), Lloyd
patent: 3736477 (1973-05-01), Berger et al.
patent: 3879745 (1975-04-01), Tharmaratnam
patent: 3956641 (1976-05-01), Berger et al.
patent: 4009397 (1977-02-01), Mulder et al.
Blatt et al., IEEE IEDM Tech. Digest, Dec. 1974, pp. 511-514.
Berger et al., IEEE ISSCC, Feb. 1975, Dig. of Tech. Papers, pp. 172-173.
Anantha et al., IBM Tech. Discl. Bull., vol. 14, No. 1, Jun. 1971, pp. 96-97.

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