I DSS RF amplifier

Amplifiers – With semiconductor amplifying device – Including field effect transistor

Reexamination Certificate

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Details

C330S310000

Reexamination Certificate

active

07064611

ABSTRACT:
A single-power-supply Idss-bias RF amplifier is disclosed, which is composed by the first and second stages Amplifiers. The two stages have the same circuit topology except matching circuits. The source terminal of amplifier is grounded directly to reduce a parasitic effect from a bias circuit. It will increase the stability of the RF amplifier and avoid an oscillation. The lossy matching circuits and eliminating resonator circuit are designed to make the RF amplifier unconditional stable. A variable resister is put into to adjust a D.C. voltage on the drain terminal. The current of amplifier could be controlled in a reasonable range. High gain and quit low noise have been obtained.

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patent: 6329879 (2001-12-01), Maruyama et al.
patent: 6759906 (2004-07-01), Matsunaga et al.

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