Semiconductor device manufacturing: process – Making passive device – Resistor
Patent
1998-06-05
2000-07-18
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making passive device
Resistor
438238, H01L 2120
Patent
active
060906782
ABSTRACT:
A novel I.C. processing scheme for the fabrication of thin film features eliminates the wet etching step previously required, reducing the chip's minimum metal spacing and improving component matching capabilities and reliability. A thin film material is deposited and patterned, prior to a contact mask or platinum sputter/sinter/strip step, followed by the deposition of a protective layer. Contact mask and silicide metallization steps create contacts to the substrate, and a second contact mask step creates openings to the thin film features. The protective layer covering the thin film material allows a dry etch to be used for the final metal etch step, eliminating the need for a wet etch step and its attendant problems. The process requires no new design rules, and is easily adapted to existing products.
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Analog Devices Inc.
Nguyen Tuan H.
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