Hypoeutectic ohmic contact to N-type gallium arsenide with diffu

Details Hypoeutectic ohmic contact to N-type gallium arsenide with diffu Hypoeutectic ohmic contact to N-type gallium arsenide with diffu

1987-06-01

1991-03-05

Hille, Rolf

357 65, H01L 29460, H01L 29540, H01L 29620

Patent

active

049981587

ABSTRACT:
A hypoeutectic ohmic contact to gallium arsenide comprising a refractory metal layer is provided which reduces the outdiffusion of gallium and arsenic which would otherwise be seen as impurities at the outer surface of the ohmic contact.

REFERENCES:
patent: 3028663 (1962-04-01), Iwersen et al.
patent: 3273979 (1966-09-01), Budnick
patent: 3370207 (1968-02-01), Fabel et al.
patent: 4188710 (1980-02-01), Davey et al.
patent: 4300149 (1981-11-01), Howard et al.
J. K. Howard; Electromigration Improvement of Al--Cu or Au Conductors; IBM Technical Disclosure Bulletin, vol. 21, No. 12, May 1979.

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