Hyperfrequency semiconductor device having external connections

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357 51, 357 56, 357 58, 357 68, H01L 2348

Patent

active

048128953

ABSTRACT:
A hyperfrequency semiconductor device having external beam-lead connectors is provided with a capacitance connected in series with the inductance produced by said beam-leads, said capacitance being integrated in at least one of the latter and its value being so selected that at operating frequency of the device said capacitance compensates said inductance.

REFERENCES:
patent: 3426252 (1969-02-01), Lepselter
patent: 3740523 (1973-06-01), Cohen et al.
patent: 3877063 (1975-04-01), Abraham et al.
patent: 4409608 (1983-10-01), Yoder
patent: 4481487 (1984-11-01), Brehm et al.

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