Hydrothermal process for growing large crystals or crystal layer

Details Hydrothermal process for growing large crystals or crystal layer Hydrothermal process for growing large crystals or crystal layer

1993-08-23

1994-12-27

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having growth from a solution comprising a solvent which is...

117224, 117941, C30B 710

Patent

active

053755561

ABSTRACT:
In order to obtain large, high-quality crystals or crystal layers of a me orthophosphate, in particular, GaPO.sub.4 or AlPO.sub.4, from a nutrient solution with the use of a seed plate, the proposal is put forward that in the initial phase of the growth process a seed plate of alpha-quartz (.alpha.-SiO.sub.2) be introduced into the nutrient solution, and that fluoride ions (F.sup.-) be added to this solution, at least for formation of the primary crystal layer on the quartz seed plate.

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patent: 4382840 (1983-05-01), Chai et al.
patent: 4481069 (1984-11-01), Chai et al.
patent: 4578146 (1986-03-01), Chai
patent: 4579622 (1986-04-01), Caporaso et al.
patent: 4678535 (1987-07-01), Mang et al.
patent: 4946545 (1990-08-01), Engel et al.

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