Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
Patent
1991-03-26
1994-06-21
Chaudhuri, Olik
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having growth from a solution comprising a solvent which is...
117902, 117942, C30B 1524
Patent
active
053225910
ABSTRACT:
The growth of bismuth silicate crystals occurs in a high pressure vessel or autoclave using a hydrothermal growth process. The nutrient material is placed in a sealed container of noble metal, liner, along with a solvent to a selected fill level. A filler fluid is also placed between the liner and the pressure vessel. The oriented seeds are placed in the cooler top seed zone over a baffle that slows the movement of supersaturated liquid from the hotter lower nutrient zone. Using a selected heating schedule for the top and the bottom zones, a plurality of large crystals are grown in the seed zone. The temperature differential is about 5.degree. C.
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Litvin et al., Synthesis and Electrooptic Properties of Single Si-Sillentie Crystals, Soviet Physics-Crystallography, vol. 13, No. 6, Jun. 1969, pp. 971-973.
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"Crystal Growth and Electro-Optic Effect of Bismuth Germanate, Bi.sub.4 (GeO.sub.4).sup.3 "; Nitsche; Journal Applied Physics; vol. 36, No. 8, Aug. 1965.
Armington Alton F.
Cormier J. Emery
Harris Meckie T.
Larkin John J.
Chaudhuri Olik
Collier Stanton E.
Garrett Felisa
Singer Donald J.
The United States of America as represented by the Secretary of
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