Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2007-10-02
2007-10-02
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S701000, C257S708000, C257S709000
Reexamination Certificate
active
09382524
ABSTRACT:
A conductive system and a method of forming an insulator for use in the conductive system is disclosed. The conductive system comprises a foamed polymer layer on a substrate. The foamed polymer layer has a surface that is hydrophobic, and a plurality of conductive structures are embedded in the foamed polymer layer. An insulator is formed by forming a polymer layer having a thickness on a substrate. The polymer layer is foamed to form a foamed polymer layer having a surface and a foamed polymer layer thickness, which is greater than the polymer layer thickness. The surface of the foamed polymer layer is treated to make the surface hydrophobic.
REFERENCES:
patent: 3506438 (1970-04-01), Krock et al.
patent: 3953566 (1976-04-01), Gore
patent: 3956195 (1976-05-01), Topchiashvili et al.
patent: 3962153 (1976-06-01), Gore
patent: 4009799 (1977-03-01), Fathauer
patent: 4096227 (1978-06-01), Gore
patent: 4368350 (1983-01-01), Perelman
patent: 4482516 (1984-11-01), Bowman et al.
patent: 4561173 (1985-12-01), Te Velde
patent: 4577212 (1986-03-01), Hueckel et al.
patent: 4599136 (1986-07-01), Araps et al.
patent: 4663535 (1987-05-01), Nakai et al.
patent: 4673589 (1987-06-01), Standley
patent: 4705659 (1987-11-01), Bernstein et al.
patent: 4749621 (1988-06-01), Araps et al.
patent: 4962058 (1990-10-01), Cronin et al.
patent: 4992764 (1991-02-01), Ayasli
patent: 5084750 (1992-01-01), Adlerstein
patent: 5103288 (1992-04-01), Sakamoto et al.
patent: 5128382 (1992-07-01), Elliott, Jr. et al.
patent: 5137780 (1992-08-01), Nichols et al.
patent: 5158986 (1992-10-01), Cha et al.
patent: 5158989 (1992-10-01), Ogitani et al.
patent: 5171713 (1992-12-01), Matthews
patent: 5173442 (1992-12-01), Carey
patent: 5202573 (1993-04-01), Shirai
patent: 5227103 (1993-07-01), Muschiatti
patent: 5311465 (1994-05-01), Mori et al.
patent: 5324683 (1994-06-01), Fitch et al.
patent: 5334356 (1994-08-01), Baldwin et al.
patent: 5340843 (1994-08-01), Tsuruta et al.
patent: 5408742 (1995-04-01), Zaidel et al.
patent: 5449427 (1995-09-01), Wojnarowski et al.
patent: 5470693 (1995-11-01), Sachdev et al.
patent: 5470802 (1995-11-01), Gnade et al.
patent: 5473814 (1995-12-01), White
patent: 5480048 (1996-01-01), Kitamura et al.
patent: 5486493 (1996-01-01), Jeng
patent: 5488015 (1996-01-01), Havemann et al.
patent: 5510645 (1996-04-01), Fitch et al.
patent: 5548159 (1996-08-01), Jeng
patent: 5552638 (1996-09-01), O'Connor
patent: 5554305 (1996-09-01), Wojnarowski et al.
patent: 5591676 (1997-01-01), Hughes et al.
patent: 5593926 (1997-01-01), Fujihira
patent: 5646526 (1997-07-01), Takeda et al.
patent: 5677887 (1997-10-01), Ishibashi et al.
patent: 5691565 (1997-11-01), Manning
patent: 5747880 (1998-05-01), Havemann et al.
patent: 5773363 (1998-06-01), Derderian et al.
patent: 5780121 (1998-07-01), Endo
patent: 5784328 (1998-07-01), Irrinki et al.
patent: 5785787 (1998-07-01), Wojnarowski et al.
patent: 5786630 (1998-07-01), Bhansali et al.
patent: 5789762 (1998-08-01), Koyama et al.
patent: 5798200 (1998-08-01), Matsuura et al.
patent: 5801412 (1998-09-01), Tobita
patent: 5804607 (1998-09-01), Hedrick et al.
patent: 5821621 (1998-10-01), Jeng
patent: 5830923 (1998-11-01), Venkataramm
patent: 5831266 (1998-11-01), Jerominek et al.
patent: 5844317 (1998-12-01), Bertolet et al.
patent: 5864923 (1999-02-01), Rouanet et al.
patent: 5869880 (1999-02-01), Grill et al.
patent: 5878314 (1999-03-01), Takaya et al.
patent: 5879794 (1999-03-01), Korleski, Jr.
patent: 5891797 (1999-04-01), Farrar
patent: 5923074 (1999-07-01), Jeng
patent: 5953626 (1999-09-01), Hause et al.
patent: 5962909 (1999-10-01), Jerominek et al.
patent: 5994777 (1999-11-01), Farrar
patent: 6004442 (1999-12-01), Choulga et al.
patent: 6023125 (2000-02-01), Yoshikawa et al.
patent: 6025015 (2000-02-01), Landry-Coltrain et al.
patent: 6028348 (2000-02-01), Hill
patent: 6037249 (2000-03-01), Chiang et al.
patent: 6040628 (2000-03-01), Chiang et al.
patent: 6065131 (2000-05-01), Andrews et al.
patent: 6071600 (2000-06-01), Rosenmayer
patent: 6077792 (2000-06-01), Farrar
patent: 6094715 (2000-07-01), Wilkinson et al.
patent: 6140200 (2000-10-01), Eldridge
patent: 6156374 (2000-12-01), Forbes et al.
patent: 6165890 (2000-12-01), Kohl et al.
patent: 6195156 (2001-02-01), Miyamoto et al.
patent: 6212314 (2001-04-01), Ford
patent: 6214716 (2001-04-01), Akram
patent: 6222216 (2001-04-01), Rao et al.
patent: 6233184 (2001-05-01), Barth et al.
patent: 6245658 (2001-06-01), Buynoski
patent: 6251470 (2001-06-01), Forbes et al.
patent: 6265303 (2001-07-01), Lu et al.
patent: 6268637 (2001-07-01), Gardner et al.
patent: 6307194 (2001-10-01), Fitzgibbons et al.
patent: 6313046 (2001-11-01), Juengling et al.
patent: 6313518 (2001-11-01), Ahn et al.
patent: 6323125 (2001-11-01), Soo et al.
patent: 6333556 (2001-12-01), Juengling et al.
patent: 6380294 (2002-04-01), Babinec et al.
patent: 6438720 (2002-08-01), Boutaud et al.
patent: 6484065 (2002-11-01), Yu et al.
patent: 6501179 (2002-12-01), Juengling et al.
patent: 6503818 (2003-01-01), Jang
patent: 6624454 (2003-09-01), Adachi
patent: 6667219 (2003-12-01), Eldridge
patent: 6836291 (2004-12-01), Nakamura et al.
patent: 6890847 (2005-05-01), Farrar
patent: 6953983 (2005-10-01), Farrar
patent: 6979848 (2005-12-01), Farrar
patent: 7112542 (2006-09-01), Juengling et al.
patent: 2001/0019876 (2001-09-01), Juengling et al.
patent: 2001/0034117 (2001-10-01), Eldridge et al.
patent: 2001/0050438 (2001-12-01), Juengling et al.
patent: 2002/0019125 (2002-02-01), Juengling et al.
patent: 2005/0285220 (2005-12-01), Farrar
patent: 2006/0046322 (2006-03-01), Farrar et al.
patent: 2006/0238187 (2006-10-01), Farrar
patent: 2006/0244112 (2006-11-01), Farrar
patent: 2006/0261484 (2006-11-01), Farrar
patent: 01-230505 (2001-08-01), None
Grove, N., et al., “Functionalized Polynorbornene Dielectric Polymers: Adhesion and Mechanical Properties”,Journal of Polymer Science, (1999),3003-3010.
Labadie, J., et al., “Nanopore Foams of High Temperature Polymers”,IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 15, (Dec., 1992),925-930.
Chiniwalla, N., et al., “Structure-Property Relations for Polynorbornenes”,Proceedings from the Eighth Meeting of the Dupont Symposium on Polymides in Microelectronics, pp. 615-642, (1998).
Jayaraj, K., et al., “Low Dielectric Constant Microcellular Foams”,Proceedings from the Seventh Meeting of the DuPont Symposium on Polymides in Microelectronics, pp. 474-501, (Sep. 1996).
Miller, R.D., et al., “Low Dielectric Constant Polymides and Polymide Nanofoams”,Seventh Meeting of the DuPont Symposium on Polymides in Microelectronics, pp. 443-473, (Sep. 1996).
Shibasaki, T., et al., “Process and Application of Fumed Silica AEROSIL”,3rd Annual Workshop on Mechanical Polishing, Lake Placid, New York, pp. 1-27, (1998).
Ting, C.H., “Low K Material/Process Development”,1996 VLSI Multilevel Interconnection State-of-the-Art Seminar, pp. 171-212, (Jun. 1996).
Van Vlack, L.H.,Elements of Materials Science, Addison-Wesley Publishing Co., Inc. Reading, MA, p. 468, (1959).
Vardaman, E.J., “Future Packaging Trends: CSP vs. Flip Chip”,11th European Microelectronics Conference, pp. 295-299, (1997).
In: Metals Handbook Ninth Edition, vol. 2 Properties and Selection: Nonferrous Alloys and Pure Metals, ASM International, pp. 796-797, (1979).
“ACCUSPIN T-18 Flowable Spin-On Polymer (SOP)”,AlliedSignal—Advanced Microelectronic Materials, Sunnyvale, CA, pp. 1-2, (Jul. 1998).
Conti, R., et al., “Processing Methods to Fill High Aspect Ratio Gaps Without Premature Constriction”,1999 Proceedings of Dielectrics for Multilevel Interconnection Conference, pp. 201-209, (1999).
Craig, J.D., “Polymide Coatings”,In: Packaging, Electronic Materials Handbook, vol. 1, ASM International Handbook Committee (eds.), ASM International, Materials Park, OH, 767-772, (1989).
Remenar, J., et al., “Templating Nanopores into Poly (Methysilsesquioxane) : New-Low Dielectric Coatings Suitab
Micro)n Technology, Inc.
Pert Evan
Schwegman Lundberg Woessner & Kluth P.A.
LandOfFree
Hydrophobic foamed insulators for high density circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Hydrophobic foamed insulators for high density circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hydrophobic foamed insulators for high density circuits will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3870610