Hydrogenated amorphous silicon photosensitive method for electro

Details Hydrogenated amorphous silicon photosensitive method for electro Hydrogenated amorphous silicon photosensitive method for electro

1985-08-07

1986-09-23

Goodrow, John L.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 95, G03G 5085

Patent

active

046135588

ABSTRACT:
Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4123269 (1978-10-01), Von Hoene
patent: 4134764 (1979-01-01), Hoffman'
patent: 4217374 (1980-08-01), Ovshinsky et al.
patent: 4225222 (1980-09-01), Kempter
patent: 4226898 (1980-10-01), Ovshinsky et al.
patent: 4265991 (1981-05-01), Hirai et al.
patent: 4557990 (1985-12-01), Nakagawa et al.
Thompson, et al., Sputtered Amorphous Silicon Solar Cells, Proc. Int'l Photovoltaic Solar Energy Conf., Sep. 1977.
Moustakas, 23 Solid State Comm. PP. 155-158 (1977).
Sze, S. M., Physics of Semiconductor Devices, pp. 141-146 published by Wiley-Interscience.
RCA Experimenter's Manual, pp. 3 and 4, 1967 by RCA Corp.
J. Electrochemical Soc.; vol. 116, #1 pp. 77-81.
Applied Physics. Letter vol. 28, #2, p. 105.

Affiliated with

Also associated with

Rating

Hydrogenated amorphous silicon photosensitive method for electro does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hydrogenated amorphous silicon photosensitive method for electro, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hydrogenated amorphous silicon photosensitive method for electro will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-766147