Hydrogen-terminated diamond MISFET and its manufacturing method

Details Hydrogen-terminated diamond MISFET and its manufacturing method Hydrogen-terminated diamond MISFET and its manufacturing method

1998-09-22

2000-02-15

Bowers, Charles

Semiconductor device manufacturing: process

Having diamond semiconductor component

438149, 438151, 438404, H01L 21336

Patent

active

060252111

ABSTRACT:
On the surface of a hydrogen-terminated diamond 1 formed by terminating a surface 2 of either a homoepitaxial diamond or a heteroepitaxial diamond or a surface-flattened polycrystal diamond are formed a drain-ohmic contact 4 and a source-ohmic contact 3 of gold or platinum, an insulating layer 5 formed of silicon oxide (SiO.sub.x : 1.ltoreq.X.ltoreq.2) and a gate electrode 6 mounted on said insulating layer, and the surface other than the element forming region is set to be an insulating region being non-hydrogen-terminated, for example, oxygen-terminated, and the elements formed on said region is being isolated.

REFERENCES:
patent: 5107315 (1992-04-01), Kumagai et al.
patent: 5455432 (1995-10-01), Hartsell et al.
patent: 5500393 (1996-03-01), Nishibayashi et al.
T Maki et al., "Hydrogenating effect os single-crystal diamond surface"; JJAP, part 2, vol. 31, No. 10A, pp. 1446-1449, Oct. 1992.
Hiroshi Kawarada et al.; "Enhancement Mode Metal-Semiconductor Field Effect Transistors Using Homoepitaxial Diamonds", Applied Physics Letters, vol. 65, No. 12, Sep. 19, 1994, pp. 1563-1565.
Hideo Kiyota et al.; "Fabrication of Metal-Insulator-Semiconductor Devices Using Polycrystalline Diamond Film", Japanese Journal of Applied Physics, vol. 30, No. 12A, Part 2, Dec. 1, 1991, pp. L2015-L2017.

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