Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1997-08-29
1998-12-29
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257632, H01L 310312
Patent
active
058544968
ABSTRACT:
On the surface of a hydrogen-terminated diamond 1 formed by terminating a surface 2 of either a homoepitaxial diamond or a heteroepitaxial diamond or a surface-flattened polycrystal diamond are formed a drain-ohmic contact 4 and a source-ohmic contact 3 of gold or platinum, an insulating layer 5 formed of silicon oxide (SiO.sub.x : 1.ltoreq.X.ltoreq.2) and a gate electrode 6 mounted on said insulating layer, and the surface other than the element forming region is set to be an insulating region being non-hydrogen-terminated, for example, oxygen-terminated, and the elements formed on said region is being isolated.
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patent: 5338945 (1994-08-01), Baliga et al.
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patent: 5459107 (1995-10-01), Palmour
Hiroshi Kawarada et al.; "Enhancement Mode Metal-Semiconductor Field Effect Transistors Using Homoepitaxial Diamonds", Applied Physics Letters, vol. 65, No. 12, Sep. 19, 1994, pp. 1563-1565.
Hideo Kiyota et al.; "Fabrication of Metal-Insulator-Semiconductor Devices Using Polycrystalline Diamond Film", Japanese Journal of Applied Physics, vol. 30, No. 12A, Part 2, Dec. 1, 1991, pp. L2015-L2017.
Hokazono Akira
Ishikura Takefumi
Kawarada Hiroshi
Yamashita Satoshi
Hardy David B.
Martin-Wallace Valencia
Tokyo Gas Co. Ltd.
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