Hydrogen silsesquioxane thin films for low capacitance structure

Details Hydrogen silsesquioxane thin films for low capacitance structure Hydrogen silsesquioxane thin films for low capacitance structure

1997-07-11

2000-09-05

Booth, Richard

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438624, 438780, 438781, 438902, H01L 214763

Patent

active

061141860

ABSTRACT:
An improved method is provided for integrating HSQ into integrated circuit structures and processes, especially those requiring multiple levels of interconnect lines. In a preferred embodiment, interconnect lines 14 are first patterned and etched on a substrate 10. A low-k material such as hydrogen silsesquioxane (HSQ) 18 is spun across the surface of the wafer to fill areas between interconnect lines. A capping layer such as SiO.sub.2 20 is applied to on top of the low-k material. The HSQ is then heated to cure. A thick SiO.sub.2 planarization layer 22 may then be applied and planarized. In other embodiments, the HSQ and SiO.sub.2 process steps can be repeated for multiple layers of HSQ.

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