Measuring and testing – Gas analysis – Detector detail
Reexamination Certificate
2011-08-09
2011-08-09
Boyer, Randy (Department: 1771)
Measuring and testing
Gas analysis
Detector detail
C422S088000, C422S098000, C977S957000
Reexamination Certificate
active
07992425
ABSTRACT:
A novel, resistance-based porous silicon sensor with Pd nano structures as the hydrogen sensing layer is presented. The sensor operates at room temperature. The hydrogen sensor of the present includes a p-Type Si substrate that is subjected to porous Si etching to form a nanoporous substrate. The substrate is then coated with a thin layer of Pd and annealed at 900 degrees C. This results in some Pd getting oxidized on porous Si and a thin PdO layer forms on the surface of the substrate. The sensor in accordance with the present invention exhibits an inverse relationship between increased hydrogen concentration versus resistance.
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Bhansali Shekhar
Luongo Kevin
Boyer Randy
Lawson Michele L.
Smith & Hopen , P.A.
University of South Florida
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