Hydrogen-selective sensor and manufacturing method therefor

Details Hydrogen-selective sensor and manufacturing method therefor Hydrogen-selective sensor and manufacturing method therefor

1983-12-22

1986-08-26

Barr, Josephine L.

Electrical resistors

Resistance value responsive to a condition

Gas, vapor, or moisture absorbing or collecting

252578, 252519, 252520, 252521, 427 82, 427 88, 427 91, 427 93, 427 94, 427 95, H01L 700, H01B 106

Patent

active

046085491

ABSTRACT:
A hydrogen-selective gas sensor comprising a gas-sensing element including a semiconductor in a principal portion thereof, and a thin coat or layer inactive for oxidation of hydrogen formed over an entire surface of the gas-sensing element or at least on a surface of the semiconductor. The thin layer comprises one of silicon oxide, aluminum oxide, and silicon nitride, and is formed on the surface of the semiconductor by chemical deposition, the thin layer checking passage of molecules other than hydrogen molecules.

REFERENCES:
patent: 3903226 (1975-09-01), Iga
patent: 3926858 (1975-12-01), Ichinose
patent: 4045764 (1977-08-01), Ichinose et al.
patent: 4347495 (1982-08-01), Hunter et al.

Affiliated with

Also associated with

Rating

Hydrogen-selective sensor and manufacturing method therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hydrogen-selective sensor and manufacturing method therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hydrogen-selective sensor and manufacturing method therefor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2314363