Hydrogen-rich, low dielectric constant gate insulator for field

Details Hydrogen-rich, low dielectric constant gate insulator for field Hydrogen-rich, low dielectric constant gate insulator for field

1996-03-29

1997-11-04

Horabik, Michael

Electric lamp and discharge devices

Electrode and shield structures

Point source cathodes

313497, 313336, 313552, 313551, 313562, 445 70, 25218825, H01J 1924, H01J 9395, C01B 302

Patent

active

056843569

ABSTRACT:
An emitter structure 12 for use in a field emission display device comprises a ballast layer 17 overlying ah electrically conductive coating 16 (cathode electrode), which is itself formed on an electrically insulating substrate 18. A gate electrode comprises a coating of an electrically conductive material 22 which is deposited on an insulating layer 20. Cone-shaped microtips 14 formed within apertures 34 through conductive layer 22 and insulating layer 20. In the present invention, insulating layer 20 comprises a dielectric material capable of desorbing at least ten atomic percent hydrogen, which may illustratively comprise hydrogen silsesquioxane (HSQ). HSQ is an abundant source of hydrogen which keeps deleterious oxides from forming on microtip emitters 14. HSQ also reduces the capacitance formed by cathode electrode 16 and gate electrode 22, since its relative dielectric constant is less than 3.5. In alternative embodiments, the gate insulation layer 20 additionally includes one or more sublayers of a more dense insulating material 20b and 20c, typically a plasma deposited silicon dioxide.

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