Fishing – trapping – and vermin destroying
Patent
1993-07-19
1994-10-11
Thomas, Tom
Fishing, trapping, and vermin destroying
437937, 437939, H01L 21265
Patent
active
053546989
ABSTRACT:
In semiconductor manufacture a method of ion implanting a substrate includes an in-situ hydrogen reduction for removing or outgassing contaminants present on the surface of the substrate. By removing the contaminants, the implantation of "knock ons" into the crystal lattice structure of the substrate is prevented. In an illustrative embodiment of the invention, the hydrogen reduction is performed using a low-temperature, high-energy hydrogen plasma. The method of the invention can be used to remove contaminants such as carbon, carbon dioxide, oxygen, sulfur, phosphorus, boron, H.sub.2 O and native oxides present on the surface to be implanted.
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Chaudhari Chandra
Gratton Stephen A.
Micro)n Technology, Inc.
Thomas Tom
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