Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1995-03-15
1997-04-15
Caldarola, Glenn A.
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
134 11, 216 68, 216 70, 216 79, 438743, B44C 122, C03C 1500, C03C 2506, C23F 100
Patent
active
056205597
ABSTRACT:
A method of manufacturing a semiconductor device. The method includes the application of a gas containing HF vapor and H.sub.2 O or alcohol vapor to a substrate. An excitation energy is applied to a flow of gas containing hydrogen to generate a plasma. Gas containing nitrogen fluoride is added to the gas containing hydrogen at a first position which is downstream from the place where the plasma is generated and at which the concentration of high energy particles in the gas containing hydrogen is negligible. The HF treated substrate is exposed to the gas containing nitrogen fluoride at a second position which is further downstream than the first position where the nitrogen fluoride is added.
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Caldarola Glenn A.
Fujitsu Limited
Pasterczyk J.
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