Hydrogen plasma passivation of GaAs

Details Hydrogen plasma passivation of GaAs Hydrogen plasma passivation of GaAs

1991-01-18

1993-01-12

Thomas, Tom

Fishing, trapping, and vermin destroying

437937, 427569, 156643, H01L 2100, H01L 2102, H01L 21265, H01L 21329

Patent

active

051790297

ABSTRACT:
Hydrogen Plasma surface passivation of III-V Semiconductors is critically dependent on exposure time and pressure because of competition between plasma passivation and damage. Proper control of pressure according to the invention yields reproducible and stable passivation. Improved passivation is obtained using high pressure hydrogen plasmas, i.e. above 1 Torr.

REFERENCES:
patent: 4266986 (1981-05-01), Benton et al.
patent: 4343830 (1982-08-01), Sarma et al.
patent: 4610731 (1986-09-01), Chevallier et al.
patent: 4645683 (1987-02-01), Gourrier et al.
patent: 4936781 (1990-06-01), Mircea et al.
patent: 5059551 (1991-10-01), Chevallier et al.
Chevallier, J. Donor neutralization in GaAs(Si) by atomic hydrogen, Appl. Phys. Lett. 47(2), Jul. 1985, pp. 108-110.
Paccagnella, A., Schottky diodes on hydrogen plasma treated n-GaAs surfaces, Appl. Phys. Lett. 55(3), Jul. 1989, pp. 259-261.
Omel'yanovskii, E., Passivation of shallow impurity centers in gallium arsenide by atomic hydrogen, Sov. Phys.-Semicond. (USA), vol. 21, No. 10, Oct. 1987, pp. 1068-1069.
Omeljanovsky, E., Hydrogen passivation of defects and impurities in GaAs and InP, J. Electron. Mater. (USA), vol. 18, No. 6, Nov. 1989, pp. 659-670.
Pan, N., Si donor neutralization high-purity GaAs, Appl. Phys. Lett. (USA), vol. 50, No. 25, Jun. 1987, pp. 1832-1834.
Chevallier, J., Correlation between hydrogen diffusion and donor neutralization in hydrogenated n-GaAs:Si, 14th Inter. Conf. on Defects in Semiconductors, vol. 10-12, pt. 2, 1986, pp. 591-595.
Chevallier, J., Passivation of deep level defects in Molecular beam epitaxial GaAs by hydrogen plasma exposure, Appl. Phys, Lett. (USA) vol. 49, No. 17, Oct. 1986, pp. 1098-1100.
Pearton, S., Hydrogenation of shallow-donor levels in GaAs, J. Appl. Phys. (USA), vol. 59, No. 8, Apr, 1986, pp. 2821-2827.
Pearton, S., Hydrogen passivation of deep donor centers in high-purity epitaxial GaAs, Electron. Lett. (GB), vol. 18, No. 16, Aug. 1982, pp. 715-716.
"Surface Passivation of GaAs" H. H. Lee, R. J. Racicot, and S. H. Lee; Appl. Phys. Lett. 54(8), Feb. 20, 1989; (pp. 724-726).

Affiliated with

Also associated with

Rating

Hydrogen plasma passivation of GaAs does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hydrogen plasma passivation of GaAs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hydrogen plasma passivation of GaAs will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1219754