Fishing – trapping – and vermin destroying
Patent
1991-05-17
1993-02-23
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437228, 437233, 437240, H01L 21302
Patent
active
051889862
ABSTRACT:
The method for providing a cleaned doped polycrystalline silicon surface involves providing a polycrystalline silicon body. The body is uniformly doped with a phosphorous impurity from a phosphorous vapor source, such as phosphorous pentoxide. The silicon oxide surface layer is removed from the doped polycrystalline silicon surface formed during the doping with a hydrofluoric acid solution. An important cleaning step of the doped polycrystalline silicon surface is now accomplished with a basic solution of hydrogen peroxide. The highly dense integrated circuit device process can now proceed with any desired patterning of the polycrystalline body or layer without the yield problems of the past.
REFERENCES:
patent: 4322264 (1982-03-01), Rioult et al.
patent: 4433008 (1984-02-01), Schnable et al.
patent: 4652334 (1987-03-01), Jain et al.
patent: 4871416 (1989-10-01), Fukuda
patent: 4939103 (1990-07-01), Szoleyemy
patent: 4948757 (1990-08-01), Jain et al.
Wolf; "Silicon Processing for the VLSI Era"; vol. 1; pp. 264-265, 556-557; 1986.
Sze; "VLSI Technology"; 2nd Edition; pp. 44-45; 1983.
Chen Chad-Yang
Huang Chih-Kung
Liu Wei-Jyh
Dang Trung
Hearn Brian E.
Saile George O.
United Microelectronics Corporation
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