Hydrogen ion implanter using a broad beam source

Details Hydrogen ion implanter using a broad beam source Hydrogen ion implanter using a broad beam source

2011-03-01

2011-03-01

Nguyen, Kiet T (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

Reexamination Certificate

active

07897945

ABSTRACT:
Ion implanters incorporating multibeam ion sources are used to meet process dose and energy demands associated with fabricating a thin lamina for use in photovoltaic devices. The thin lamina are formed by ion implantation followed by cleaving.

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