Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Including contaminant removal or mitigation
Reexamination Certificate
2005-10-25
2005-10-25
Thompson, Craig A. (Department: 2813)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Including contaminant removal or mitigation
C438S116000, C257S682000, C257SE23137
Reexamination Certificate
active
06958260
ABSTRACT:
A method, system and materials for use in hydrogen gettering in conjunction with microelectronic and microwave components that are generally hermetically sealed in an enclosure typically referred to as a “package”. Gettering materials that can be used include titanium with or without a hydrogen permeable coating or covering, alloys of zirconium-vanadium iron and zeolites and several ways to apply these materials to the package. In addition, the hydrogen permeable material can be used over a vent from the interior of the package to the exterior wherein hydrogen will escape from the package interior when the hydrogen concentration within the package is greater than without the package.
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Chem.Abstra.119: 16841 (JP 04313317) “Apparatus for removal of hydrogen from vacuum chambers especially high energy accelerators at ultra-low temperatures” by Saes Getters, S.p.A.
Abstract of JP59208860, Patent Abstracts of Japan. vol. 009, No. 075 (E306), Apr. 4, 1985.
Bedinger John M.
Fuller Clyde R.
Brady III W. James
Doty Heather A.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Thompson Craig A.
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