Hydrogen gas sensitive semiconductor sensor

Details Hydrogen gas sensitive semiconductor sensor Hydrogen gas sensitive semiconductor sensor

2006-09-21

2009-11-24

Griffin, Walter D (Department: 1797)

Chemical apparatus and process disinfecting, deodorizing, preser

Analyzer, structured indicator, or manipulative laboratory...

Means for analyzing gas sample

C422S083000, C422S050000, C257S414000, C257S471000, C257S472000

Reexamination Certificate

active

07622080

ABSTRACT:
A hydrogen gas sensitive semiconductor sensor including a catalytic metal layer, a semiconductor layer and an insulator layer arranged between the catalytic metal layer and the semiconductor layer. The catalytic metal layer includes an outer surface and an inner surface including at least one hydrogen atom adsorption surface portion. Each hydrogen atom adsorption surface portion is arranged adjacent to the insulator layer. The surface area of the outer surface is at least 100% larger than the total surface area of all of the at least one hydrogen atom adsorption surface portion. A probe includes the sensor, A hydrogen gas detection system includes the sensor. Use of the sensor for detection of presence of and/or measurement of concentration of hydrogen gas in a gas sample.

REFERENCES:
patent: 3975253 (1976-08-01), Radd et al.
patent: 4058368 (1977-11-01), Svensson et al.
patent: 4795968 (1989-01-01), Madou et al.
patent: 6041643 (2000-03-01), Stokes et al.
patent: 6109094 (2000-08-01), Baranzahi et al.
patent: 6484563 (2002-11-01), Enquist et al.
patent: 6569779 (2003-05-01), Lundstrom et al.
patent: 3151891 (1983-07-01), None
patent: 36 34 132 (1987-04-01), None
patent: 2 183 344 (1987-06-01), None
patent: 387 444 (1974-09-01), None
patent: WO 01/69228 (2001-09-01), None
patent: WO 03/002999 (2003-01-01), None
European Patent Search Report, dated Apr. 17, 2007, issued for corresponding European Application No. EP 06 12 0254.
K. Tajima et al., “RF-Sputtered SiGe Thin Film for Thermoelectric Hydrogen Sensor,” Abs. 1460, 204thMeeting,© 2003 The Electrochemical Society, Inc.
Ingemar Lundstrom, “Hydrogen Sensitive MOS-Structures Part 1. Principles and Applications,”Sensors and Acturators, 1, pp. 403-426 (1981).
U. Ackelid et al.; Metal-Oxide-Semiconductor Structures with Thermally Activitated Sensitivity to Ethanol Vapour and Unsaturated Hydrocarbons; Proc. of the 2nd int. meeting on chemical sensors; 1986; pp. 395-398.
Mikael Löfdahl et al.; Gas response dependence on gate metal morphology of field-effect devices; Sensors and Actuators B 80; 2001; pp. 183-192.

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