Hydrogen free integration of high-k gate dielectrics

Details Hydrogen free integration of high-k gate dielectrics Hydrogen free integration of high-k gate dielectrics

2006-06-27

2006-06-27

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S723000, C438S724000, C438S788000, C438S792000, C438S910000, C438S954000

Reexamination Certificate

active

07067434

ABSTRACT:
The present invention pertains to forming a transistor in the absence of hydrogen, or in the presence of a significantly reduced amount of hydrogen. In this manner, a high-k material can be utilized to form a gate dielectric layer in the transistor and facilitate device scaling while mitigating defects that can be introduced into the high-k material by the presence of hydrogen and/or hydrogen containing compounds.

REFERENCES:
patent: 4481229 (1984-11-01), Suzuki et al.
patent: 5162892 (1992-11-01), Hayashi et al.
patent: 5750211 (1998-05-01), Weise et al.
patent: 6303512 (2001-10-01), Laermer et al.
patent: 6485988 (2002-11-01), Ma et al.
patent: 6620713 (2003-09-01), Arghavani et al.

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