Hydrogen fluoride vapor phase selective etching method for fabri

Details Hydrogen fluoride vapor phase selective etching method for fabri Hydrogen fluoride vapor phase selective etching method for fabri

1996-05-08

1999-07-13

McCamish, Marion

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438735, H01L 21302

Patent

active

059226234

ABSTRACT:
Disclosed is a method selective of vapor phase etching for fabricating a semiconductor device having a refractory metal silicide electrode abutting a silicon oxide film on the surface or a semiconductor device having an AlGaAs layer, an electrode formed on the AlGaAs layer and a silicon oxide film on the surface of the semiconductor device. The method comprises a step of removing a portion of the silicon oxide film by a gas including a vapor of hydrogen fluoride. The method further uses a mixture of nitrogen gas including vapor of anhydrous hydrofluoric acid and a nitrogen gas including a vapor of H.sub.2 O, wherein the ratio of the nitrogen gas including the vaporized anhydrous hydrofluoric acid to the nitrogen gas including vapor of H.sub.2 O is less than 1.

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