Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Including contaminant removal or mitigation
Reexamination Certificate
2007-04-17
2007-04-17
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Including contaminant removal or mitigation
C438S116000, C438S125000, C257SE23137
Reexamination Certificate
active
11184177
ABSTRACT:
A hydrogen diffusion port for use in a packaged electronic device. In one embodiment, the hydrogen window is characterized by a substantial absence of plating from the external surfaces of the cover the base. The hydrogen diffusion port is selected from the group of materials consisting of palladium and its alloys, platinum and its alloys and titanium and its alloys The cover is welded to the base, and the hydrogen diffusion port is affixed to an aperture in the cover. The port is affixed by a low temperature process that can be accomplished after the cover is attached to the base to form a housing and the housing is degassed, without compromising the electronics within the housing and that does not require a partial pressure of hydrogen (which may be reintroduced into the materials) to accomplish, such as by soldering the diffusion port into the cover aperture, or by swaging the diffusion port into the cover aperture.
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Bronson David
Evans Robert D.
McNees Walalce & Nurick LLC
Picardat Kevin M.
The Boeing Company
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