Hydrogen and oxygen based photoresist removal process

Details Hydrogen and oxygen based photoresist removal process Hydrogen and oxygen based photoresist removal process

2005-06-08

2008-08-19

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257SE21294, C438S329000

Reexamination Certificate

active

07413994

ABSTRACT:
The present invention provides a photoresist removal process and a method for manufacturing an interconnect using the same. One embodiment of the photoresist removal process includes, among other steps, providing a low dielectric constant (k) substrate having a photoresist layer located thereover, and removing the photoresist layer using a plasma which incorporates a gas which includes hydrogen or deuterium and a small amount of oxygen less than about 20 volume percent of the gas. Another embodiment of the photoresist removal process includes, among other steps, providing a low dielectric constant (k) substrate having a photoresist layer located thereover, removing a bulk portion of the photoresist layer using a plasma which incorporates a gas which includes hydrogen or deuterium, and removing a small portion of the photoresist layer using a plasma which incorporates a gas which includes oxygen, wherein the order of the two removing steps is interchangeable.

REFERENCES:
patent: 6235453 (2001-05-01), You et al.
patent: 6251771 (2001-06-01), Smith et al.
patent: 6693043 (2004-02-01), Li et al.
patent: 2003/0130147 (2003-07-01), Koito et al.

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