Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Patent
1996-05-07
1997-06-03
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
257 4, 257107, 257108, 359248, 359265, 359270, G02F 101
Patent
active
056357290
ABSTRACT:
A description is given of a switching device (1) comprising a transparent substrate (3), a reflective switching film (5) of yttrium having a thickness of 500 nm and a palladium layer (7) having a thickness of 5 nm. Using hydrogen gas at atmospheric pressure and at room temperature, a transparent, semiconductive film (5) of YH.sub.3 is formed, which is converted to a metallic mirror-like film (5) of YH.sub.2 by exposure to heat. The conversion of YH.sub.2 into YH.sub.3 is reversible and can for example be used in an optical switching element and in thin displays.
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Griessen Ronald P.
Huiberts Johannes N.
Rector Jan H.
Crane Sara W.
Fox John C.
Hardy David B.
U.S. Philips Corporation
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