Hydrofluoric etch quenching via a colder rinse process

Details Hydrofluoric etch quenching via a colder rinse process Hydrofluoric etch quenching via a colder rinse process

1997-03-07

1998-10-06

Breneman, R. Bruce

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

216 99, 438756, B08B 600, B44C 122

Patent

active

058171827

ABSTRACT:
One embodiment of the instant invention is a method of abruptly terminating etching of a dielectric layer on a semiconductor wafer, the method comprising the steps of: removing the semiconductor wafer from the etchant, the etchant is held a first temperature; and rinsing the semiconductor wafer in a rinse solution that is at a second temperature, the second temperature is at least 5.degree. C. colder than the first temperature. Preferably, the dielectric layer is comprised of: TEOS, BPSG, PSG, thermally grown oxide, and any combination thereof. Preferably, first temperature is approximately 25.degree. C. and the second temperature is approximately 0.degree. to 5.degree. C.; or the first temperature is approximately 70.degree. to 90.degree. C. and the second temperature is approximately 10.degree. to 30.degree. C. Preferably, the etchant is comprised of a buffered or unbuffered HF acid, and the rinse solution is comprised of deionized water. The second temperature is, preferably, at least 15.degree. C. colder than the first temperature.

REFERENCES:
patent: 5294570 (1994-03-01), Fleming, Jr. et al.

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