Hydrocarbon-enhanced dry stripping of photoresist

Details Hydrocarbon-enhanced dry stripping of photoresist Hydrocarbon-enhanced dry stripping of photoresist

1996-01-23

1998-10-20

Kunemund, Robert

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438731, 252 791, H01L 21302

Patent

active

058246045

ABSTRACT:
Means for increasing the selectivity of photoresist stripping to oxide etching are disclosed. A plasma of an oxidizing gas, a fluoride-containing compound, and a hydrocarbon contains reactive species that preferentially strip photoresist from a substrate with little etching of oxide on the substrate's surface when the reactive species contact the substrate. The reactor, compositions, and methods disclosed are particularly useful in processes for etching silicon wafers to form semiconductor or microelectromechanical devices.

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