Hydride deposition of phosporus-containing semiconductor materia

Details Hydride deposition of phosporus-containing semiconductor materia Hydride deposition of phosporus-containing semiconductor materia

1987-04-13

1988-03-08

Roy, Upendra

Fishing, trapping, and vermin destroying

156613, 156614, 156642, 437 88, H01L 736, H01L 21203

Patent

active

047299681

ABSTRACT:
Hillock formation in the vapor phase epitaxial hydride deposition of indium phosphide is avoided. This effect is accomplished by ensuring that the phosphine utilized in the deposition gas flow is essentially completely decomposed before reaching the deposition area. Additionally, by utilizing the phosphine decomposition procedure, advantageous results are also achieved in the epitaxial hydride deposition of phosphorus-containing semiconductor materials.

REFERENCES:
patent: 3729341 (1973-04-01), Dietz et al.
patent: 3888705 (1975-06-01), Fletcher et al.
patent: 4086108 (1978-04-01), Gonda
patent: 4146774 (1979-03-01), Fraas
patent: 4220488 (1980-09-01), Duchemin et al.
patent: 4385946 (1983-05-01), Finegan et al.
patent: 4468283 (1984-08-01), Ahmed
patent: 4488914 (1984-12-01), Quinlan et al.
patent: 4504329 (1985-03-01), Quinlan et al.
patent: 4568397 (1986-02-01), Hoke et al.
Pogge et al., Jour. Crystal Growth, 31, (1975), 183.

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