Chemistry of inorganic compounds – Silicon or compound thereof
Reexamination Certificate
2011-07-19
2011-07-19
Ward, Jessica L (Department: 1735)
Chemistry of inorganic compounds
Silicon or compound thereof
C423S644000, C117S939000, C148SDIG058
Reexamination Certificate
active
07981392
ABSTRACT:
A method is provided for synthesizing silicon-germanium hydride compounds of the formula (H3Ge)4-XSiHX, wherein x=0, 1, 2 or 3. The method includes combining a silane triflate with a compound having a GeH3ligand under conditions whereby the silicon-germanium hydride is formed. The compound having the GeH3ligand is selected from the group consisting of KGeH3, NaGeH3and MR3GeH3, wherein M is a Group IV element and R is an organic ligand. The silane triflate can be HXSi(OSO2CF3)4-xor HxSi(OSO2C4F9)4-x. The method can be used to synthesize trisilane, (H3Si)2SiH2, and the iso-tetrasilane analog, (H3Si)3SiH, by combining a silane triflate with a compound comprising a SiH3ligand under conditions whereby the silicon hydride is formed. The silane triflate can include HXSi(OSO2CF3)4-xor HXSi(OSO2C4F9)4-xwherein x=1 or 2. A method for synthesizing (H3Ge)2SiH2includes combining H3GeSiH2(OSO2CF3) with KGeH3under conditions whereby (H3Ge)2SiH2is formed.
REFERENCES:
patent: 2988427 (1961-06-01), Jenker et al.
patent: 4777023 (1988-10-01), Fieselmann
patent: 4910153 (1990-03-01), Dicksen et al.
patent: 7598513 (2009-10-01), Kouvetakis et al.
patent: 2004/0040493 (2004-03-01), Vineis et al.
patent: 2006/0163612 (2006-07-01), Kouvetakis et al.
patent: 2008/0113186 (2008-05-01), Kouvetakis et al.
patent: 2009/0050935 (2009-02-01), Kouvetakis et al.
patent: 2010/0012972 (2010-01-01), Kouvetakis et al.
patent: 2004036631 (2004-04-01), None
Andrews, T.D. et al. “Further Studies on the Silicon-Germanium Hydrides.” J. Chem. Soc. (A), 1966, p. 46-48.
Lobreyer, Thomas et a. “Uber die verbesserte Darstellung von Silyl-und Germylkalium sowie die Synthese von Silylgermanen.” Chem. Ber. 1991, 124(11), p. 2405-2410. Abstract Only.
Chizmeshya, et al., J. Am. Chem. Soc. 2006, 128 (21), 6919-6930.
Gersten, et al., The Physics and Chemistry of Materials , John Wiley & Sons; New York, 2001, pp. 96-100.
Dutton, et al., Inorganic Chemistry, 1968, 7(9), pp. 1735-1739.
Lobreyer, T., Chem Ber, 1991, 124(11), 2405-2410.
Mackay, K.M., et al, J. Chem Soc, 1969, A, 2938.
Mooney, P. M.; et al. Annu. Rev. Mater. Sci. 2000, 30, 335.
Tromp, R. M.; et al. Annu. Rev. Mater. Sci. 2000, 30, 431.
Brunner, K., et al., Rep. Prog. Phys. 2002, 65(1), 27-72.
Kuo, Y-H; et al. Nature 2005, 437, 1334.
Bean, J, C; et al. J. Vac Sci. Technol. 1984, A 2(2), 436-440.
Greve, D.W., Mat. Sci. Eng., 1993, B18(1), 22-51.
Konig, U., et al., IEEE Electron Device Lett, 1993, 14(4), 205-207.
M. L. Lee, J. Appl. Phys. 2003, 94, 2590-2596.
R. Hamond, Electron. Lett. 1999, 35(18), 1590-1591.
Y. J. Mii, Appl. Phys. Lett., 1991, 59(13), 1611-1613.
P. M. Mooney, Appl. Phys. Lett., 1995, 67(16), 2373-2375.
K. K. Linder, Appl. Phys Lett., 1997, 70(24), 3224-3226.
C. S. Peng, Appl. Phys. Lett., 1998, 72(24), 3160-3162.
Lee, M. L.; et al. J. Vac. Sci.Technol. 2004, B 22 (1), 158.
E. Kasper, et al., Appl Surf. Sci. 2004, 224, 3.
Currie, M. T.; et al. Appl. Phys. Lett. 1998, 72 (14), 1718.
G. Eres, et al., J. Vac. Sci. Technol., 1993, A11(5), 2463-2471.
T. R. Bramblett, et al. J. Appl. Phys., 1995, 77(4), 1504-1513.
J. Takahashi, et al., Appl. Phys. Lett., 1991, 58(24), 2776-2778.
Ritter, C.J.; et al. J. of the Am. Chem. Soc., 2005, 127(27), 9855-9864.
Hu, C.-W.; et al. Applied Physics Letters, 2005, 87(18), 181903/1-3.
Nijhawan, S.; et al. J. Aerosol Science 2003, 34, 691-711.
Soldner, M.; et al. J. Organometallic Chem. 1996, 521, 295.
Urban, J.; et al. J. Chem. Phys. Lett. 1997, 264, 441-448.
Albinsson, B.; et al. J. Phys. Chem. 1996, 100, 8681.
Jasinski, J. M.; et al. Chem. Rev. 1995, 95, 1203.
Cullis, A.G.; et al. J. Cryst. Growth 1992, 123, 333.
Hu, et al. (2003) Chemistry of Materials: American Chemical Society, 15(19):3569-3572.
Bauer, et al. (2003) Applied Physics Letters, 83(11): 2163-2165.
Wolf, et al. (1986) Processing for the VLSI ERA. vol. 1: Process Technology; Lattice Press; Sunset Beach, CA; Chapter 6, pp. 161-197.
Gaiduk, et al. (2000) Thin Solid Films, 367 (1-2): 120-125.
Supplemental ISR EP 05746524, mailed Jan. 31, 2011.
Kouvetakis John
Ritter, III Cole J.
Tolle John
McDonnell Boehnen & Hulbert & Berghoff LLP
The Arizona Board of Regents, a body corporate of the state of A
Ward Jessica L
Wartalowicz Paul A
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