Hybrid vertical type power semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide

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257331, 257341, H01L 310312

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active

060021438

ABSTRACT:
A vertical type semiconductor device having a semiconductor substrate and at least one gate electrode structure formed in the semiconductor substrate for controlling a current flow across the semiconductor substrate. The semiconductor substrate is formed by a silicon substrate, a silicon carbide or diamond layer epitaxially deposited on the silicon substrate, and a silicon layer epitaxially deposited on the silicon carbide or diamond layer. Recesses are formed in the silicon layer and gate electrodes are provided in the recesses via silicon oxide films. Source or emitter regions are formed in portions of the silicon layer which are brought into contact with the silicon oxide films by inverting the conductivity of these portions. Source or emitter electrodes are provided on the source or emitter regions, and a drain or collector electrode is provided on a rear surface of the silicon substrate.

REFERENCES:
patent: 4641164 (1987-02-01), Dolny et al.
patent: 4994871 (1991-02-01), Chang et al.
patent: 5294814 (1994-03-01), Das
patent: 5371378 (1994-12-01), Das
patent: 5378912 (1995-01-01), Pein
patent: 5379089 (1995-01-01), Uenishi et al.
Amato, M. and Rumennik, V. "Comparison of Lateral and Vertical DMOSD Specific On-Resistrance", IEEE, IDM85, pp. 736-739, 1985.
Patent Abstracts of Japan, vol. 013, No. 493 (E-842), Nov. 8, 1989 & JP 01 196873 A (Sharp Corp), Aug. 8, 1989, *abstract*.
Patent Abstracts of Japan, vol. 013, No. 493 (E-842), Nov. 8, 1989 & JP 01 196874 A (Nippon Denso Co., Ltd.), Aug. 8, 1989, *abstract*.
M. Bhatnagar and B. J. Baliga: "Analysis of Silicon Carbide Powder Device Performance", Proc. 3rd International Symposium on Power Semiconductor Devices and ICs, 176-180 (1991).
Mitlehner et al. "A Novel 8 KV Light-Triggered Thyristor With Overvoltage Self Protection," 1990, pp. 289-294.
Baliga, "Modern Power Devices," 1987, pp. 350-353.
Amato et al., "Comparison of Lateral and Vertical DMOS Specific On-Resistance," 1985, pp. 736-739.
Adler et al., "The Evolution of Power Device Technology," 1984, pp. 1570-1591.
Ishidoh et al., "Advanced High Frequency GTO," 1988, pp. 189-194.
Nishizawa et al., "Effects of Gate Structure on Static Induction Thyristor," 1980, pp. 658-661.
Nishizawa et al., "Static Induction Thyristor," 1978, pp. 725-728.
Nishizawa et al., "Field-Effect Transistor Versus Analog Transistor (Static Induction Transistor)," 1975, pp. 185-197.

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