Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Patent
1996-08-23
1998-03-17
Tokar, Michael J.
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
257431, H01L 3300
Patent
active
057290202
ABSTRACT:
The hybrid type infrared detector includes a plurality of photodiodes constructed by p-n junctions made of compound semiconductor material on a silicon substrate, a signal processing portion formed on another substrate, and a connecting member for electrically connecting the plurality of photodiodes with the signal processing portion, and for injecting carriers generated by the photodiodes into the signal processing portion, and is characterized in that partitioning portions are formed along the cleavage plane of the compound semiconductor material.
REFERENCES:
"HgCdTe On Si For Hybrid and Monolithic FPAs," by Ken Zanio. SPIE vol. 1308 Infrared Detectors and Focal Plane Arrays (1990); pp. 180-193.
Fukuda Katsuyoshi
Matsushita Keiichi
Shigenaka Keitaro
Hanig Richard
Kabushiki Kaisha Toshiba
Tokar Michael J.
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