Hybrid type infrared detector

Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system

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257431, H01L 3300

Patent

active

057290202

ABSTRACT:
The hybrid type infrared detector includes a plurality of photodiodes constructed by p-n junctions made of compound semiconductor material on a silicon substrate, a signal processing portion formed on another substrate, and a connecting member for electrically connecting the plurality of photodiodes with the signal processing portion, and for injecting carriers generated by the photodiodes into the signal processing portion, and is characterized in that partitioning portions are formed along the cleavage plane of the compound semiconductor material.

REFERENCES:
"HgCdTe On Si For Hybrid and Monolithic FPAs," by Ken Zanio. SPIE vol. 1308 Infrared Detectors and Focal Plane Arrays (1990); pp. 180-193.

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