Hybrid transistor structure with widened leads for reduced therm

Details Hybrid transistor structure with widened leads for reduced therm Hybrid transistor structure with widened leads for reduced therm

1996-07-05

1998-08-11

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

257197, 257573, 257579, 257584, H01L 310328

Patent

active

057930678

ABSTRACT:
An electrode lead of a transistor extends beyond other electrode leads of the transistor, is disposed adjacent to the corresponding electrode, and is disposed outside the other electrode leads for heat radiation. A wider part of the electrode lead may have a via hole or a thick metal plating for heat radiation. Further, the electrode is preferably grounded and is connected to an external input terminal to which heat is transferred.

REFERENCES:
patent: 5373185 (1994-12-01), Sato

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