Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2006-04-25
2009-11-17
Menz, Douglas M (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C257SE31130, C257SE51015, C136S256000, C136S263000
Reexamination Certificate
active
07618838
ABSTRACT:
A method for forming a photovoltaic cell which includes forming a nanostructured layer in a semiconductor material having a plurality of pores opening onto a surface, the plurality of pores having a depth greater than about 1 micron and a diameter between about 5 nanometers and about 1,200 nanometers, and disposing an organic charge-transfer material in the pores of the nanostructured layer. A first electrode is attached to the semiconductor material, and a second electrode is attached to the organic charge-transfer material. The semiconductor material has a thickness between about 5 microns and about 700 microns. Desirably, the nanostructured layer has a porosity of less than the porosity corresponding to the percolation threshold, and the organic charge-transfer material extends at least about 100 nm from the surface of the nanostructured layer. The organic charge-transfer material may partially cover the sides of the pores of the nanostructured layer thereby providing a generally cylindrical cavity therein.
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Castracane James
Euler William B.
Levitsky Igor A.
Tokranova Natalya A.
Xu Bai
Heslin Rothenberg Farley & & Mesiti P.C.
Menz Douglas M
Such Matthew W
The Research Foundation of State University of New York
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