Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1995-06-07
1996-08-06
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257228, 257236, 257239, 257241, 257249, H01L 27148, H01L 29768
Patent
active
055436412
ABSTRACT:
A preferred embodiment of this invention is a hybrid semiconductor imaging structure comprising a high speed signal conditioning substrate (e.g. Si 12) and an imaging substrate (e.g. HgCdTe 10) mounted on the conditioning substrate using an adhesive layer (e.g. epoxy 31). Infrared-sensitive time delay and integration CCD columns (14) charge coupled to sense nodes (e.g. diodes 16) are disposed in the imaging substrate. High speed signal processing channels (e.g. capacitive transimpedance amplifier 18, congelated double sampling circuit 20 and multiplexing shift register 22) are disposed in the conditioning substrate. The sense nodes are connected to the signal processing channels with low capacitance hybrid leads (e.g AI 17).
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Borrello Sebastian R.
Gooch Roland W.
Wadsworth Mark V.
Carlson Brian A.
Donaldson Richard A.
Ngo Ngan V.
Stoltz Richard A.
Texas Instruments Incorporated
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