Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1998-04-28
2000-02-29
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 57, 257 66, 257 67, 257 69, 257 72, H01L 2904, H01L 31036, H01L 310376, H01L 3120, H01L 2946
Patent
active
060312483
ABSTRACT:
A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein.
REFERENCES:
patent: 4407010 (1983-09-01), Baji et al.
patent: 4758896 (1988-07-01), Ito
patent: 4876668 (1989-10-01), Thakror et al.
patent: 4954895 (1990-09-01), Akimoto et al.
patent: 5017989 (1991-05-01), Street et al.
patent: 5243202 (1993-09-01), Mori et al.
patent: 5262649 (1993-11-01), Antonuk et al.
patent: 5366926 (1994-11-01), Mei et al.
patent: 5539461 (1996-07-01), Andoh et al.
L.E. Antonuk, J. Boudry, C.W. Kim, M. Longo, E.J. Morton, J. Yorkston, Signal, Noise, and Readout Considerations in the Development of Amorphous Silicon Photodiode Arrays for Radiotherapy and Diagnostic X-Ray Imaging,SPIE, vol. 1443, Medical Imaging V: Image Physics, 1991, P. 108-119.
T. Aoyama, K. Ogawa, Y. Mochizuki, N. Konishi, Inverse Staggered Polycrystalline and Amorphous Silicon Double Structure Thin Film Transistors, Appl. Phys. Lett., vol. 66, No. 22, May 29, 1995, P. 3007-3009.
S.S. He, D.J. Stephens, G. Lucovsky, Improved Electrical Performance of a-Si:H Thin Film Transistors, TFTs With n+uc-Si Contact, and Silicon Oxide and Nitride Dual-Layer Dielectrics, Materials Research Society Symp. Proc., vol. 297, 1993, P. 871-876.
S. Kawai, T. Kodama, Y. Nasu, S. Yanagisawa, K. Asama, A Self-Alignment Processed a:Si:H TFT Matrix Circuit for LCD Panels, Proceedings of the SID, vol. 25/1, 1984, P. 21-24.
T. Serikawa, S. Shirai, A. Okamoto, S. Suyama, Low-Temperature Fabrication of High-Mobility Poly-Si TFT'S for Large-Area LCD'S,IEEE Transactions on Electron Devices, vol. 36, No. 9, Sep. 1989, P. 1929-1933.
K. Shimizu, O. Sugiura, M. Matsumura, On-Chip Bottom-Gate Polysilicon and Amorphous Silicon Thin-Film Transistors Using Excimer Laser Annealing,Japanese Journal of Applied Physics, vol. 29, No. 10, Oct. 1990. P. L1775-L1777.
K. Shimizu, H. Hosoya, O. Sugiura, High-Mobility Bottom-Gate Thin-Film Transistors With Laser-Crystallized and Hydrogen-Radical-Annealed Polysilicon Films,Japanese Journal of Applied Physics, Part 1, vol. 30, No. 12B, 1991, P. 3704-3709.
R.A. Street, S. Nelson, Amorphous Silicon Sensor Arrays for Radiation Imaging, Materials Research Society Symp. Proc., vol. 192, 1990, P. 441-452.
T. Tanaka, H. Asuma, K. Ogawa, Y. Shinagawa, K. Ono, N. Konishi, An LCD Addressed by a-Si:H TFTS with Peripheral Poly-Si TFT Circuits, IEEE, 1993, P. 389-392.
J. Yorkston, L.E. Antonuk, E.J. Morton, J. Boudry, W. Huang, C.W. Kim, M.J. Longo, R.A. Street, The Dynamic Response of Hydrogenated Amorphous Silicon Imaging Pixels, Materials Research Society Symp. Proc., vol. 219, 1991, P. 173-178.
T. Delbruck and C.A. Mead, Analog VLSI Phototransduction by Continuous-Time, Adaptive, Logarithmic Photoreceptor Circuits, California Institute of Technology, Computation and Neural Systems Program, Oct. 18, 1993. P. 1-23.
Tobi Delbruck and Carver A. Mead, Time-Derivative Adaptive Silicon Photoreceptor Array, SPIE, Infrared Sensors: Detectors, Electronics, and Signal Processing, vol. 1541, 1991, P. 92-99.
Tobias Delbr'uck, Investigations of Analog VLSI Visual Transduction and Motion Processing, UMI Dissertation Services, Degree Date: 1993, P. 1-176.
Apte Raj B.
Boyce James B.
Mei Ping
Moore Andrew J.
Ready Steven E.
Meier Stephen D.
Xerox Corporation
LandOfFree
Hybrid sensor pixel architecture does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Hybrid sensor pixel architecture, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hybrid sensor pixel architecture will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-685379