Hybrid semiconductor-ferromagnet device with a junction...

Details Hybrid semiconductor-ferromagnet device with a junction... Hybrid semiconductor-ferromagnet device with a junction...

2011-01-18

2011-01-18

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S422000, C438S003000

Reexamination Certificate

active

07872321

ABSTRACT:
A hybrid semiconductor-ferromagnet device is a device which has micromagnets (Co) deposited on semiconductor (InAs) two-dimensional electrons, and which has a junction structure of positive and negative magnetic field regions using a stray field resulting from the micromagnets. The magnetoresistance measured in the hybrid semiconductor-ferromagnet device has an asymmetrical hall resistance profile, and a change in magnetoresistance thereof is very large. The measured data is well consistent with the calculated results using a diffusive mode and a ballistic model.

REFERENCES:
patent: 2004/0178460 (2004-09-01), Lee et al.
Sungjung Joo, “Asymmetric Magnetoresistance In A Double Magnetic Barrier Device”, Journal of the Korean Physical Society, vol. 48, No. 4, Apr. 15, 2006, pp. 642-647.

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